SISPAD 2021, September 27-29
The final paper submission deadline will be July 23rd. For oral presentation, we will just ask for a copy of your slides for live presentation or video recording before your talk in case of technical difficulties.
Contributed papers will be allowed a maximum of 4 pages for text, figures, tables. Acknowledgments and references may extend onto a 5th page. For your paper, use the US letter format. There will be an IEEE Express submission system
The extended abstract submission deadline April 23rd.
Two-page abstract (text and figures, A4, 10 – 12 pt, pdf) should be sent to sispad2021@utdallas.edu
- Contributed abstracts are limited to two pages total including tables and figures, but acknowledgments and references included at the end may extend onto a 3rd page.
- The text of the abstract should begin with a very brief description of subject, relevance and most important qualitative results.
- Pages must be either ASI LETTER (8.5 in x 11.0 in) with 1 in margins all around, or 4A size (21.0 cm x 29.7 cm) with 2.5 cm margins all around.
- Abstracts must be submitted in PDF format.
- Abstract file size must be no larger than 10MB.
- Abstract must be emailed to sispad2021@utdallas.edu.Provide comments as needed in your email. For example, if you prefer a poster presentation or will only accept an oral presentation, please indicate so.
Authors of accepted papers are requested to submit a four-page final paper which will be published in the conference proceedings. The deadline for submission of the four-page final paper is July 9, 2021.
The SISPAD conference series provides an open forum for the presentation of the latest results and trends in process and device simulation. The conference is the leading forum for Technology Computer-Aided Design (TCAD) and is held alternatingly in the United States, Japan, and Europe in September.
Original contributions are solicited for SISPAD 2021 on topics that include but are not limited to:
- Modeling and simulation of established semiconductor device, including FinFETs, GAA FETs, ultra-thin SOI devices, optoelectronic devices, TFTs, sensors, power electronic devices, and organic electronic devices.
- Modeling and simulation of emerging devices including tunnel FETs, SETs, spintronic devices, straintronic devices, bio-electronic devices, and new material-based devices for various applications
- Modeling and simulation of interconnects, including noise and parasitic effects
- Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
- Advances in fundamental aspects of device modeling and simulation, including of charge, spin, and thermal transport, of collective states including spin/magnetic and charge, and of fluctuation, noise, and reliability.
- Numerical methods and algorithms, including grid generation, user-interface, and visualization
- Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
- Process/device/circuit co-simulation in context with system design and verification, including for emerging devices
- Modeling and simulation of equipment, topography, lithography
- Benchmarking, calibration, and verification of simulators